Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034059 | Thin Solid Films | 2015 | 4 Pages |
Abstract
Luminescent a-Si:H/SiNx superlattice structures (SLs) with different thicknesses of sublayers were fabricated on indium tin oxide coated glass by three electrode chemical vapour deposition chamber. Transmission electron micrograph revealed small amount of silicon nanocrystallites embedded between two SiNx sublayers. Electroluminescence (EL) and electrical properties of the SLs were investigated. The dominant current mechanism is considered to be Fowler-Nordheim tunnelling under high electric field. EL mechanism is attributed to bipolar recombination of hole-electron pairs. EL spectrum of the SLs was deconvoluted into two Gaussian peaks with a major band at around ~Â 700Â nm and minor at ~Â 560Â nm. EL spectra blue-shift with decreasing the thickness of a-Si:H sublayers.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Tomas Grigaitis, Arnas Naujokaitis, Giedrius JuÅ¡ka, KÄstutis Arlauskas,