Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034100 | Thin Solid Films | 2015 | 5 Pages |
Abstract
The dielectric constant for the film samples with thickness (d) lower than 650Â nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb2O5 stoichiometry units.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M.P.F. Graça, M. Saraiva, F.N.A. Freire, M.A. Valente, L.C. Costa,