Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034171 | Thin Solid Films | 2015 | 4 Pages |
Abstract
In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/â¡. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Duy Phong Pham, Huu Truong Nguyen, Bach Thang Phan, Van Dung Hoang, Shinya Maenosono, Cao Vinh Tran,