Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034191 | Thin Solid Films | 2015 | 4 Pages |
Abstract
Co-evaporation of NaF during the 3rd stage of the low temperature Cu(In,Ga)Se2 multi-stage process is compared to post-deposition treatment (PDT) with NaF in view of their influence on the electronic and structural properties. In case of NaF co-evaporation, quantum efficiency losses in the near infrared region and thus lower short circuit current density cause a reduced efficiency compared to solar cells prepared with NaF PDT. The formation of a deep defect with activation energy of ~Â 250Â meV is measured by capacitance spectroscopy and can explain the deteriorated performance in such devices. In addition, NaF co-evaporation during the 3rd stage causes reduced grain size in the top part of Cu(In,Ga)Se2 and altered In, Ga, and Cu distribution.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
B. Bissig, P. Reinhard, F. Pianezzi, H. Hagendorfer, S. Nishiwaki, S. Buecheler, A.N. Tiwari,