Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034197 | Thin Solid Films | 2015 | 5 Pages |
Abstract
In a second part, precursor films were elaborated with increasing Ga(NO3)3 concentration. After reduction of the films in hydrogen and selenization heat treatments, X-ray diffraction analysis shows the incorporation of Ga into the CIGS phase with increasing Ga content in the optimal composition range for photovoltaic applications (x = 0.25-0.34). Gallium composition profiles are evidenced in the films with a tendency to higher concentration near the Mo surface. Increasing annealing temperature allows a better homogenization of Ga in the film. The consequences are correlated to optoelectronic measurements (Eg and cell efficiency) with bandgap measurement and cell efficiencies (10 to 12%).
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Authors
T. Sidali, A. Duchatelet, E. Chassaing, D. Lincot,