Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034210 | Thin Solid Films | 2015 | 5 Pages |
Abstract
Amorphous thin Ge2Sb2Te5 films were deposited by MOCVD (metal organic chemical vapor deposition) on three-dimensional structures. Ammonium gas, used as a reactant, reduced the deposition temperature to 150 °C, which is lower than that of metal-organic precursors. Introducing nitrogen and hydrogen radicals made by decomposition of the ammonium gas further reduced the growth temperature. The lowest growth temperature producing a realistic growth rate was 100 °C. Phase-change memory cells made of MOCVD-grown films were confirmed to have operation and reliability characteristics as good as those of conventional cells made of sputter-deposited films.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yoshihisa Fujisaki, Yoshitaka Sasago, Takashi Kobayashi,