| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8034569 | Thin Solid Films | 2015 | 4 Pages |
Abstract
Anomalous Hall effect (AHE) studies have been carried out in Co/Pt multilayers prepared by magnetron sputtering under annealing. The AHE behavior can be deteriorated by annealing in Pt/[Co/Pt]3/Pt thin films, while saturation anomalous Hall resistivity in MgO/[Co/Pt]3/MgO multilayers after annealing at 623Â K for 30Â min is 124% larger than that in the as-deposited films. The X-ray photoelectron spectroscopy analysis exhibits that the increased AHE is primarily ascribed to annealing dependent oxygen atom diffusion at the Co/MgO interface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shao-Long Jiang, Xi Chen, Jing-Yan Zhang, Guang Yang, Jiao Teng, Xu-Jing Li, Yi Cao, Qian-Qian Liu, Kang Yang, Chen Hu, Guang-Hua Yu,