Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034686 | Thin Solid Films | 2015 | 7 Pages |
Abstract
The microstructural properties of an aluminum nitride (AlN) layer grown on a silicon (Si(110)) substrate were studied in detail using transmission electron microscope techniques to determine atomic structure and dislocation behavior. AlN islands elongated along the [112¯0]AlN//[1¯10]Si direction were observed at the initial growth stage on the Si(110) substrate. The threading dislocations with a Burgers vector vertical to the interface, most probably be = [0001] of the wurtzite structure, were frequently observed in the AlN thin film. Due to anisotropic biaxial strain distributions, two different atomic structure behaviors were observed along the two in-plane directions; a coherent interface was observed along the [112¯0]AlN//[1¯10]Si direction and a semicoherent interface, including periodic extra-half planes, was observed along the [1¯100]AlN//[001]Si direction. The extra-half planes were observed at approximately two monolayers above the interface, and not at the exact interface.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Y.H. Kim, J.H. Lee, Y.K. Noh, J.E. Oh, S.J. Ahn,