Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034855 | Thin Solid Films | 2015 | 6 Pages |
Abstract
The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current-voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, Ïb vs. 1/2kT revealed a double Gaussian distribution for the barrier height with Ïb,mean assuming values of 0.59 eV ± 0.07 (80-140 K) and 0.25 eV ± 0.12 (140-320 K) respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Venter, D.M. Murape, J.R. Botha, F.D. Auret,