Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034970 | Thin Solid Films | 2014 | 4 Pages |
Abstract
GaN cathodes with nanometer-scale diameters were produced by plasma and photoelectrochemical etching of the structure formed on the n+-GaN substrate with n+-GaN top active layer. The values of band gap energy for GaN nanorods were determined by electro-reflectance modulation spectroscopy and are 3.374 eV, 3.424 eV, and 3.509 eV for the light and heavy holes, respectively. The energy separation between main (Ð) and satellite (Ð¥) valleys was estimated using the field and photo-assisted field emission data and is equal to âEРâ X = 1.258 eV.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Semenenko, O. Kyriienko, O. Yilmazoglu, O. Steblova, N. Klyui,