Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8034996 | Thin Solid Films | 2014 | 23 Pages |
Abstract
Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiNx/SiO2/SiNx/SiO2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5Â cm2/Vs, threshold voltage of 2.5Â V, subthreshold swing of 0.63Â V/decade, and on/off current ratio of 5Â ÃÂ 106. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Rongsheng Chen, Wei Zhou, Meng Zhang, Hoi-Sing Kwok,