Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035081 | Thin Solid Films | 2014 | 4 Pages |
Abstract
A device model for amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) that explains temperature dependence is proposed. It incorporates a carrier-density dependent mobility and a density of subgap traps of a-IGZO. The model parameters were extracted from only one transfer curve of an a-IGZO TFT at a low drain voltage through a simple analytical model. Device simulation based on this model reproduced current- and mobility-gate voltage characteristics of the a-IGZO TFT well over a wide range of bias voltage and temperature (253-393Â K).
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Katsumi Abe, Ayumu Sato, Kenji Takahashi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono,