Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035092 | Thin Solid Films | 2014 | 4 Pages |
Abstract
InOxFy thin films were epitaxially grown on Y-stabilized ZrO2 (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (TS), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high TS (â¥Â 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ~ 0.3. By decreasing TS, y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at TS â¤Â 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films.
Keywords
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sohei Okazaki, Yasushi Hirose, Shoichiro Nakao, Chang Yang, Isao Harayama, Daiichiro Sekiba, Tetsuya Hasegawa,