Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035109 | Thin Solid Films | 2014 | 4 Pages |
Abstract
Using thermal co-evaporation we have prepared epitaxial Cu2ZnSnS4 (CZTS) films on Si(001) substrates. A substrate temperature as high as 370 °C and proper substrate cleaning (HF-dip followed by thermal desorption of surface hydrogens) are found to be necessary for the epitaxial growth. Detailed transmission electron microscopy measurements and X-ray diffraction studies are used to reveal the orientation relation of the CZTS films with the underlying silicon substrate, and the formation of defects within the CZTS layer.
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Materials Science
Nanotechnology
Authors
Byungha Shin, Yu Zhu, Talia Gershon, Nestor A. Bojarczuk, Supratik Guha,