Reflection high energy electron diffraction studies on SixSnyGe1 − x − y on Si(100) molecular beam epitaxial growth

In situ reflection high energy electron diffraction was used to study the surface micromorphology of SixSnyGe1 − x − y / Si(100) heterostructures obtained by molecular beam epitaxy. The obtained reflection high energy electron diffraction data allowed us to conclude that the epitaxial SixSnyGe1 − x − y films are grown by the Stranski-Krastanov mechanism. It was established that SixSnyGe1 − x − y and Ge1 − zSnz wetting layer thicknesses depend on the substrate temperature. The observed surface superstructures changed during the wetting layer growth.