| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8035185 | Thin Solid Films | 2014 | 5 Pages |
Abstract
Nanoscale pn junctions have been investigated by Kelvin probe force microscopy and several particular features were found. Within the depletion region, a localized noise area is observed, induced by temporal fluctuations of dopant states. Electronic potential landscape is significantly affected by dopants with ground-state energies deeper than in bulk. Finally, the effects of light illumination were studied and it was found that the depletion region shifts its position as a function of light intensity. This is ascribed to charge redistribution within the pn junction as a result of photovoltaic effect and due to the impact of deepened-level dopants.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Roland Nowak, Daniel Moraru, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe,