Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035205 | Thin Solid Films | 2014 | 4 Pages |
Abstract
We have studied a simple structure n-channel tunnel field-effect transistor with a pure-Ge/strained-Si hetero-junction. The device operation was demonstrated for the devices fabricated by combining epitaxially-grown Ge on strained-silicon-on-insulator substrates. Atomic-layer-deposition-Al2O3-based gate stacks were formed with electron cyclotron resonance plasma post oxidation to ensure the high quality metal-oxide-semiconductor interface between the high-k insulator and Ge. While the gate leakage current and drain current saturation are well controlled, relatively higher minimum subthreshold swing of 125Â mV/dec and lower ION/IOFF ratio of 103-104 were obtained. It is expected that these device characteristics can be improved by further process optimization.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Minsoo Kim, Younghyun Kim, Masafumi Yokoyama, Ryosho Nakane, SangHyeon Kim, Mitsuru Takenaka, Shinichi Takagi,