Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035230 | Thin Solid Films | 2014 | 10 Pages |
Abstract
Corrosion inhibitors in copper slurries play a quite important role in copper chemical mechanical polishing. Besides widely used benzotriazole (BTA), 1,2,4-triazole has been demonstrated to be another promising copper inhibitor. In this paper, the properties of 1,2,4-triazole were well investigated compared with BTA. It is revealed that 45Â mM 1,2,4-triazole can achieve equivalent chemical protection for copper surface as 2Â mM BTA. The results of the tests on copper patterned wafers show that the slurry with 45Â mM 1,2,4-triazole as the copper inhibitor and 0.1Â wt.% colloidal silica can realize lower dishing and erosion than the slurry with 1Â mM BTA and 5.0Â wt.% colloidal silica. In order to investigate the passivating mechanism, the passivating paths of 1,2,4-triazole on the copper surface were also studied. The results indicate that there exist two passivating paths: the first one is the direct growth of the Cu-1,2,4-triazole passivating film on the copper surface while the second one is the redeposition of Cu-1,2,4-triazole complex on the oxidized copper surface. For the second one, the cupric ions dissolved in slurry can react with the 1,2,4-TAH species, and such reactions will result in the formation of Cu-1,2,4-triazole complex as a form of nano-particles and precipitate, which can subsequently redeposit on the oxidized copper surface to form a weak passivating film as a complement of the first direct growth path.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Liang Jiang, Yongqing Lan, Yongyong He, Yan Li, Yuzhuo Li, Jianbin Luo,