Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035254 | Thin Solid Films | 2014 | 4 Pages |
Abstract
Cu(In,Ga)Se2 (CIGS) is one of the most promising materials to fabricate low-cost and high-efficiency thin film solar cells. In this work, CIGS films were deposited by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. Based on the simulated and experimental results, the optimum averaged Ga/III, Ga/(In + Ga), in space charge region (SCR) controlling the carrier recombination near the junction and back surface Ga/III grading forming back surface field have drastic influence on cell performance. The CIGS absorber layer with double Ga/III grading profile (averaged Ga/III in SCR; 0.38 and the height of the back surface Ga/III grading; 0.33) is readily achieved by multi-layer precursor method. This leads to the improvement of efficiency of the CIGS solar cell up to 15.30% without anti-reflective layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jakapan Chantana, Masashi Murata, Takashi Higuchi, Taichi Watanabe, Seiki Teraji, Kazunori Kawamura, Takashi Minemoto,