| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8035258 | Thin Solid Films | 2014 | 5 Pages |
Abstract
Heteroepitaxial CeO2 (80Â nm)/La0.5Sr0.5CoO3 (500Â nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Velichko, P. Boriskov, A. Savenko, A. Grishin, S. Khartsev, M. Ahmed Yar, M. Muhammed,