Atomic layer deposition of strontium titanate films from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O

Strontium titanate is a promising insulator material in resistance switching random access memories. Strontium titanate thin films are prepared by atomic layer deposition from bis(tri-isopropylcyclopentadienyl)-strontium (Sr(iPr3Cp)2), Tetrakis-(dimethylamido)titanium(IV) (Ti[N(CH3)2]4) and water at a substrate temperature of 300 °C. The layer stoichiometry is analyzed by X-ray fluorescence spectroscopy for the main element composition and by X-ray photoelectron spectroscopy to detect light element contamination. A significant carbon contamination is found whereas nitrogen is not detected. These results are discussed with possible decomposition reactions of the Sr(iPr3Cp)2 molecule at the given deposition temperature. The film microstructure is characterized by grazing incidence X-ray diffraction. Optical and electrical characterizations show that the strontium titanate layers are transparent up to an optical gap of 3.85 eV and insulating.