Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035498 | Thin Solid Films | 2014 | 6 Pages |
Abstract
ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (â 20 V to â 80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ~ 95 to 200 μΩ cm, decreasing with increased growth temperature and substrate bias.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Lina Tengdelius, Mattias Samuelsson, Jens Jensen, Jun Lu, Lars Hultman, Urban Forsberg, Erik Janzén, Hans Högberg,