Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035662 | Thin Solid Films | 2014 | 5 Pages |
Abstract
We have studied up-conversion in TiO2 thin films doped with Er3 + deposited using radio frequency-magnetron sputtering. The TiO2 host was optimized to achieve efficient up-conversion signal from Er3 +. We controlled the TiO2 microstructure by varying the substrate temperature and radio frequency target power during deposition, and by changing the Er3 + doping concentration. Photoluminescence was used to investigate the influence of the microstructure of TiO2 on the up-conversion efficiency. This was attained by exciting the thin films with 1550 nm light from a CW laser, and studying the emission at a wavelength of 980 nm, corresponding to the transition from 4I11/2 to 4I15/2 in Er3 +. Our results demonstrate that strong up-conversion luminescence is obtained when the TiO2:Er3 + thin film is deposited at low radio frequency powers, high substrate temperature (â¥Â 255 °C) and with Er3 + doping above 4.5 at.%. The TiO2 host matrix was found to yield stronger up-conversion luminescence when amorphous than when polycrystalline.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sabrina R. Johannsen, Lasse Rosenfeld Lauridsen, Brian Julsgaard, Pekka T. Neuvonen, Sanjay K. Ram, Arne Nylandsted Larsen,