Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035663 | Thin Solid Films | 2014 | 5 Pages |
Abstract
Solution-processed thin film transistors (TFTs) using a magnesium zinc tin oxide (MZTO, Ma-Zn-Sn-O) channel layer were fabricated and bias-stress stability during device operation was evaluated. The cause of the bias-stress instability was investigated through comparison with zinc tin oxide (ZTO, Zn-Sn-O) TFTs. The MZTO layers had a significantly lower oxygen vacancy concentration than the ZTO layer, which affected the electrical characteristics as well as bias-stress stability of MZTO TFTs. When 2 mol% Mg was added, a more stable transistor was attained, showing a typical semiconductor behavior with a saturation mobility of 0.27 cm2/V·s, on/off ratio of 3.3 Ã 106, off-current of 5.3 Ã 10â 12A, and threshold voltage of 5.4 V.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ho Beom Kim, Ho Seong Lee,