Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035694 | Thin Solid Films | 2014 | 41 Pages |
Abstract
We report the effects of isothermal annealing on the current component, the paramagnetic K0 centers, and charge accumulation, induced by exposing silicon nitride films and silicon nitride-silicon dioxide double-layer films to 4.9-eV ultraviolet (UV) illumination. The UV-induced current component decayed as a result of the isothermal annealing at temperatures ranging from 27 °C to 240 °C, and was induced once again by UV exposure following the annealing. The density of the current component showed a close correlation with the density of the K0 centers. Based on detailed analysis, we show that electron-hole pair generation in the bulk of the silicon nitride film is the possible source of the UV-induced current component.
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Authors
Kiyoteru Kobayashi, Aran Suzuki, Kokichi Ishikawa,