Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035701 | Thin Solid Films | 2014 | 4 Pages |
Abstract
In this study, the effect of the incorporation of ZnO nanoparticles into poly(3-hexylthiophene) (P3HT) on photocurrent of P3HT/n-type Si diodes was examined. Charge detrapping/trapping phenomena are studied through time domain measurement for P3HT-based diodes and thin-film transistors. Hole detrapping was the dominant phenomena in P3HT (ZnO-doped P3HT) films. For higher density of ZnO, more holes can be released and induce higher photosensitivity of the device. ZnO influences the photoresponse by providing additional holes that serve to reduce the photocurrent time constant.
Related Topics
Physical Sciences and Engineering
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Nanotechnology
Authors
Yow-Jon Lin, Yi-Min Chin, Hou-Yen Tsao,