Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035766 | Thin Solid Films | 2014 | 5 Pages |
Abstract
Vanadium diselenide thin films were prepared by electron beam evaporation. The properties of vanadium diselenide thin films were investigated using X-ray diffraction, scanning electron microscope, transmission spectra, electrical and Hall measurements. To further investigate the application of vanadium diselenide thin films, device performance in CdTe solar cells with a vanadium diselenide layer was also studied. The results indicate that vanadium diselenide thin films had a stable hexagonal structure after annealing. The thin films were p-type semiconductor materials with the high work function and high carrier concentration. Vanadium diselenide thin films could form a good ohmic contact to CdTe solar cells. Thus, cell performance was greatly improved when introduced a vanadium diselenide buffer layer.
Related Topics
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Authors
Jingjing Gao, Xia Di, Wei Li, Lianghuan Feng, Jingquan Zhang, Lili Wu, Bing Li, Wenwu Wang, Guanggen Zeng, Jiayi Yang,