| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8035787 | Thin Solid Films | 2013 | 6 Pages |
Abstract
⺠Growth of InGaN epilayers by molecular beam epitaxy ⺠InGaN epilayers with In content up to 30 at.% without secondary phase formation. ⺠Controlled In content to the targeted content from the experimental set-up. ⺠Nitridation process of sapphire substrate to formed epitaxial AlN layer. ⺠Growth mode and structural characterization of InGaN layers
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Nanotechnology
Authors
Eun-Jung Shin, Se-Hwan Lim, Myoungho Jeong, Dong Seok Lim, Seok Kyu Han, Hyo Sung Lee, Soon-Ku Hong, Jeong Yong Lee, Takafumi Yao,