Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8035812 | Thin Solid Films | 2013 | 7 Pages |
Abstract
As-grown n-4H-SiC/SiO2 capacitors exhibit anomalous capacitance-vs.-voltage (C-V) characteristics at low temperatures. Abrupt minima appear in the C-V curves at specific values of the gate voltages independent of the sample temperature, strongly suggesting the presence of resonant electron tunneling. We put forward a qualitative model where neutral donor states present at the SiC/SiO2 interface enable electron tunneling into distinct energy levels in the oxide. Numerical simulations based on this model show close agreement with the anomalous C-V characteristics observed experimentally. The model implies that under given conditions, i.e., the existence of a sufficient density of neutral donors at the semiconductor/oxide interface and empty electron states in the oxide layer, abrupt minima are in general to be expected during C-V measurements of metal-oxide-semiconductor capacitors.
Related Topics
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Authors
L.D. Filip, I. Pintilie, L.C. Nistor, B.G. Svensson,