Structural, electrical, and thermoelectric properties of CrSi2 thin films

Chromium silicide (CrSi2) thermoelectric thin films with two different thicknesses, 1 μm and 0.1 μm, were deposited using radio frequency magnetron sputtering on glass substrates. These films were characterized after deposition and then after 300-600 °C anneals using X-ray diffraction and Energy dispersive X-ray spectroscopy. The Seebeck coefficient and electrical resistivity were measured. The compositions of the sputtered films were found to be close to the sputtering target stoichiometry. The annealing conditions and variations of thickness had a great influence on the thermoelectric performance of the films. The 0.1 μm p-type films annealed in an argon atmosphere at 400 °C exhibited the largest power factor of 1.0 × 10− 3 W/(K2·m).