Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8036419 | Thin Solid Films | 2013 | 4 Pages |
Abstract
The heterostructures with self-assembled InSb quantum dots (QDs) with density (up to 1010 cmâ 2) were obtained on the InAs-rich (100)-oriented surface by combining technology including liquid phase epitaxy and metalorganic vapor phase epitaxy. Using of the multicomponent In-As-Sb-P solid solutions lattice-matched with InAs substrate as matrix layers allows changing the surface chemistry of a matrix material. High-resolution cross-section images of the coherent InSb QDs buried into the InAs(Sb,P) matrix were obtained by transmission electron microscopy. It was experimentally demonstrated that self-assembled InSb QDs can be formed on InAs-rich surface in Stranski-Krastanow mode. The optimal thickness of the wetting layer was dependent on matrix surface chemistry: 2 nm-thick for the binary InAs surface and 1.3 nm-thick for the quaternary InAsSbP one were found.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Konstantin Moiseev, Yana Parkhomenko, Vladimir Nevedomsky,