Modifications in junction properties of ZnO/p-Si heterojunction by Fe3O4 intermediate layer

We have studied rectifying properties of ZnO/p-Si and ZnO/Fe3O4/p-Si heterojunction grown by Pulsed Laser Deposition. It is observed that junction properties strongly depend on temperature. Our measurement shows that intermediate Fe3O4 layer has significant impact in modifying the transport properties in ZnO/Fe3O4/p-Si. In ZnO/p-Si thermionic emission is dominant mechanism for electrical transport across the junction. Whereas in ZnO/Fe3O4/p-Si thermionic emission model explains the non linear current voltage characteristics at room temperature, but below Verwey transition when intermediate Fe3O4 layer act as an insulator, electrical transport is governed by tunneling mechanism.