Properties of Sb-doped SnO2 transparent conductive thin films deposited by radio-frequency magnetron sputtering

Transparent conducting Sb-doped SnO2 (ATO) thin films were prepared on quartz substrates by radio-frequency magnetron sputtering technique. The X-ray diffraction measurement shows that the as-deposited ATO film is of tetragonal crystal structure. Electrical and optical properties were investigated by Hall and optical measurements. The resistivity and optical transmittance of the ATO thin films are of the order of 10− 3 Ω · cm and over 85%, respectively. The lowest electrical resistivity of the films was found to be about 1.99 × 10− 3 Ω · cm. Finally, the organic solar cell with the ATO thin film as an anode was prepared, and a power conversion efficiency of 1.11% was achieved.