Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8036496 | Thin Solid Films | 2013 | 10 Pages |
Abstract
This paper describes a high-reflectivity metamorphic undoped GaAs/Al0.98Ga0.02As distributed Bragg reflector grown on an InP substrate by metalorganic chemical vapor deposition (MOCVD). Optimal two-step growth conditions at low and high growth temperatures can provide a smooth surface morphology, leading to a high reflectivity (>Â 99.5%) with little optical scattering loss. We also show that a large mismatched interface does not create dislocations in the active layer at a slow cooling rate after the growth sequence. These results indicate that metamorphic GaAs/Al0.98Ga0.02As directly grown on an InP substrate by MOCVD is promising for application to InP-based vertical cavity surface-emitting laser structures.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yoshitaka Ohiso, Ryuzo Iga,