Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8036515 | Thin Solid Films | 2013 | 22 Pages |
Abstract
This critical review surveys β-FeSi2 research over the years with focus on reviewing recent development in β-FeSi2-based light emitting diodes (LEDs). Based on theoretical analyses and comparison to experimental results reported in the literature, weak carrier confinement in the β-FeSi2 active layer has been identified as the likely cause for poor room-temperature electroluminescence (EL) performance of p-Si/p-β-FeSi2/n+-Si double hetero-junction LEDs. Solutions to overcome this limit have been proposed together with new research directions.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
D.Z. Chi,