Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8036779 | Thin Solid Films | 2013 | 6 Pages |
Abstract
Photoluminescent Er/Si-nanocrystal composites were obtained after annealing Er doped silicon suboxide (SiOx) thin films. The films were prepared by reactive sputtering (Ar/O2 atmosphere) with a pure silicon target partially covered with metallic Er. The presence of Er in the resulting films strongly influences Si nanocrystal nucleation and growth during thermal treatment at temperatures between 300 and 1300 °C. A correlation between Er photoluminescence (PL) spectra, Er speciation and Si nanocrystal properties indicated that PL bands and their intensity are directly influenced by the nanocrystal size and density, and their vicinity to the Er3 + centers. This correlation is explained by considering Er centers as promotor for SiOx disproportionation, locally increasing Si0 concentration which leads to formation of Si nanocrystals in the vicinity of Er.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Danilo Mustafa, Daniel Biggemann, Johan A. Martens, Christine E.A. Kirschhock, Leandro R. Tessler, Eric Breynaert,