Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8036820 | Thin Solid Films | 2013 | 4 Pages |
Abstract
The amorphous to face-centered cubic (fcc) and fcc to hexagonal close-packed (hcp) crystallization temperatures of GeSbTe thin films on underlying silicon nitride and silicon dioxide films were studied through slow (1 K/min) resistance versus temperature measurements. The amorphous to fcc phase transition is observed at ~ 170 °C for both cases but the fcc to hcp phase transition temperature for GeSbTe films on silicon nitride is observed to be ~ 80 °C lower than for GeSbTe films on silicon dioxide, possibly due to the hexagonal symmetry of silicon nitride.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K. Cil, Y. Zhu, J. Li, C.H. Lam, H. Silva,