| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037055 | Thin Solid Films | 2013 | 4 Pages |
Abstract
The influence of Sn doping level on electro-optical properties of thin films targeting an application such as hetero-junction c-Si solar cells is also investigated. Again, rotary targets operated at high power (10Â kW/m) are used, including standard grade ITO containing 10Â wt.% SnO2 and another composition with only 3Â wt.% SnO2. The influence of H2 and different concentrations of O2 in the sputter gas is analysed for both target materials. Results indicate that although coatings derived from the lower-doped ITO exhibit considerably less absorption in the NIR due to lower carrier concentrations, their resistivity is nearly 30% higher than that from the standard ITO coating.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Paul Lippens, Michal Büchel, David Chiu, Chris Szepesi,