Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8037135 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠Demonstration of N-polar GaN growth on sapphire using CrN buffer layer. ⺠Polarity selection model proposed to explain the experimental observations. ⺠Improvement of N-polar GaN crystallinity with thermal treatment of CrN layers.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jinsub Park, Takafumi Yao,