| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037142 | Thin Solid Films | 2013 | 6 Pages |
Abstract
⺠Junctions of Cu2S-CdS layers formed by substitution technique were examined. ⺠Standard methods and pulsed barrier evaluation technique were combined. ⺠Three heterojunction types revealed differing in density of dopants and traps. ⺠Different CuxS precipitates were detected in three type Cu2S-CdS structures.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Gaubas, I. Brytavskyi, T. Äeponis, J. Kusakovskij, G. Tamulaitis,