| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037155 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠Epitaxial CdTe film grew on textured Ni at 350 °C despite of a large lattice mismatch. ⺠Epitaxial relationship is CdTe(111) parallel to Ni(001). ⺠30° CdTe orientation domains inferred from transmission electron microscopy patterns ⺠Local inclined angle between CdTe and Ni at the interface is due to vertical mismatch. ⺠Single crystal-like epitaxial semiconductors can be grown on low cost metal sheet.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
G.-C. Wang, L.H. Zhang, Kim Kisslinger, C. Gaire, A. Goyal, I. Bhat, T.-M. Lu,