| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037158 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠Cu(InGa)Se2 can form using a bilayer (InGa)2Se3/CuSe precursor within 2-5 min. ⺠A thin NaF layer was inserted at the interface of (InGa)2Se3/CuSe precursors. ⺠MoSe2 thickness depends on the thickness of the NaF layer and the reaction time. ⺠Na doping resulted in increased (112) preferred orientation of the Cu(InGa)Se2.
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Authors
Sung Cheol Kim, Jaseok Koo, Woo Kyoung Kim,