Article ID Journal Published Year Pages File Type
8037159 Thin Solid Films 2013 5 Pages PDF
Abstract
► Ga and Al doped ZnO thin films were prepared by hetero targets sputtering system. ► Free electrons were increased due to the continuous substitutions of Ga and Al. ► Crystallinity was improved by recombination of particles with increasing of temperature.
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Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Preview
Effect of dopants and thermal treatment on properties of Ga-Al-ZnO thin films fabricated by hetero targets sputtering system
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