| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037179 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠High pressure oxidation of SiC in steam ambient is carried out. ⺠Effects of post oxidation annealing (POA) on oxidized SiC are studied. ⺠POA in O2 + N2 results in significant incorporation of nitrogen at the interface. ⺠Significant improvement in the electrical characteristics is observed after POA.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K. Kalai Selvi, Nandita DasGupta, K. Thirunavukkarasu,