Article ID Journal Published Year Pages File Type
8037190 Thin Solid Films 2013 6 Pages PDF
Abstract
► Au/p-InP Schottky diodes were fabricated. ► The barrier height was determined as 0.78 eV at room temperature. ► The temperature coefficient was calculated as 1.78 × 10− 4 eV K− 1 for Au/p-InP.
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Physical Sciences and Engineering Materials Science Nanotechnology
Preview
Current-voltage-temperature characteristics of Au/p-InP Schottky barrier diode
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