| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037194 | Thin Solid Films | 2013 | 6 Pages |
Abstract
⺠Pulsed laser deposition was used for fabrication of amorphous Ga-Ge-Te thin films. ⺠GeTe4, eventually GaTe4 tetrahedra and disordered Te chains form the film structure. ⺠Optical functions of Ge-Ga-Te films were characterized by spectroscopic ellipsometry. ⺠All as-deposited Ga-Ge-Te thin films are stable against 1550 nm irradiation. ⺠In annealed state, the most photostable composition seems to be Ga10Ge15Te75.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
P. NÄmec, V. Nazabal, M. Dussauze, H.-L. Ma, Y. Bouyrie, X.-H. Zhang,