Article ID Journal Published Year Pages File Type
8037203 Thin Solid Films 2013 5 Pages PDF
Abstract
► We investigated the epitaxial growth of Ge and GeSn on Ge(110) at 150 °C and 200 °C. ► Ge layers exhibit defective structures including stacking faults. ► Incorporation of Sn effectively improves on the crystallinity of a Ge layer. ► The anisotropic strain relaxation in a Ge1 − xSnx layer on Ge(110) is observed.
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Physical Sciences and Engineering Materials Science Nanotechnology
Preview
Influence of Sn incorporation and growth temperature on crystallinity of Ge1 − xSnx layers heteroepitaxially grown on Ge(110) substrates
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