Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8037218 | Thin Solid Films | 2013 | 4 Pages |
Abstract
⺠Electronic structure of N-rich Cu3N ⺠Stoichiometric films behave as an intrinsic semiconductor. ⺠N excess drives to the introduction of a narrow band at the Fermi level. ⺠Decrease of the Seebeck coefficient when increasing nitrogen content ⺠Increase of the electrical resistivity when increasing nitrogen content
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N. Gordillo, R. Gonzalez-Arrabal, P. Diaz-Chao, J.R. Ares, I.J. Ferrer, F. Yndurain, F. Agulló-López,