Article ID Journal Published Year Pages File Type
8037218 Thin Solid Films 2013 4 Pages PDF
Abstract
► Electronic structure of N-rich Cu3N ► Stoichiometric films behave as an intrinsic semiconductor. ► N excess drives to the introduction of a narrow band at the Fermi level. ► Decrease of the Seebeck coefficient when increasing nitrogen content ► Increase of the electrical resistivity when increasing nitrogen content
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
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