| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037246 | Thin Solid Films | 2013 | 7 Pages |
Abstract
⺠Disordered Si epilayers were grown by molecular beam epitaxy. ⺠Growth has been carried out at temperatures T = 98 °C-514 °C. ⺠A correlation between defect density and disorder in the films has been found. ⺠Lack of medium range order and stress cause the formation of defects at low T. ⺠At high T, defects are associated to grain boundaries and oriented stacking faults.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Arash Akbari-Sharbaf, Jean-Marc Baribeau, Xiaohua Wu, David J. Lockwood, Giovanni Fanchini,