Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8037256 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠GaN-based Ba0.5Sr0.5TiO3 (BST) layer for transparent tunable microwave devices ⺠Ga2O3/GaN structure enables epitaxial growth of BST layer. ⺠BST/Ga2O3/GaN device shows high tunability and low dielectric loss.
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Authors
S.A. Lee, J.Y. Hwang, K. Ahn, S.Y. Jeong, J.M. Kim, J.P. Kim, S.G. Yoon, C.R. Cho,